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| The basic semiconductor hybrid silicon carbide discrete device combines the new field cut-off IGBT technology and silicon carbide schottky diode technology to create a scheme for hard switching topology that gives consideration to both quality and cost performance. The device seals the traditional silicon based IGBT and silicon carbide schottky diode, which can replace the traditional IGBT (silicon based IGBT and silicon based fast recovery diode sealed) in some applications, greatly reducing the switching loss of IGBT, and is suitable for energy storage (ESS), vehicle mounted charger (OBC), uninterruptible power supply (UPS), photovoltaic string inverter and other fields. |
| Part Number | BV | IC | VCE (sat) | VF | Eon | Eoff | Package Name |
| (V) | (A) @100℃ | (V) | (V) | (mJ) | (mJ) | ||
| BGH50N65HF1 | 650 | 50 | 1.55 | 1.42 | 0.27 | 0.49 | TO-247-3 |
| BGH50N65ZF1 | 650 | 50 | 1.5 | 1.42 | / | / | TO-247-4 |
| BGH75N65HF1 | 650 | 75 | 1.63 | 1.42 | / | / | TO-247-3 |
| BGH75N65ZF1 | 650 | 75 | 1.63 | 1.42 | / | / | TO-247-4 |
| BGH40N120HF | 1200 | 40 | 1.7 | 1.41 | 1.8 | 1.34 | TO-247-3 |
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