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Silicon carbide MOSFET has the characteristics of low on resistance and small switching loss, which can reduce device loss, improve system efficiency, and is more suitable for high-frequency circuits. It is widely used in new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields. The new generation silicon carbide MOSFET (TO-247-4) with auxiliary source connection can further reduce device loss and improve system EMI performance. |
Product | VDS | ID | RDS(on) | Qg | Eon | Eoff | Package Name |
(V) | (A) | (mΩ) | (nC) | (µJ) | (µJ) | ||
B1M160120HC | 1200 | 20 | 160 | 60 | 63 | 72 | TO-247-3 |
B1M080120HC | 1200 | 44 | 80 | 149 | 254 | 180 | TO-247-3 |
B1M080120HK | 1200 | 44 | 80 | 149 | 163 | 77 | TO-247-4 |
B1M032120HC | 1200 | 84 | 32 | 314 | 1215 | 463 | TO-247-3 |
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