Silicon carbide Schottky diode-Basic semiconductor-New Crystal Technology (Shenzhen) Co., Ltd.-

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As a wide band gap semiconductor material, silicon carbide has better performance than traditional silicon based devices. Wide band gap (3.26eV) and high critical field (3 × 106V/cm) and high thermal conductivity (4.9W/cm · K) make the power semiconductor device more efficient and faster, and reduce the cost, volume, weight, etc. of the equipment. The basic semiconductor silicon carbide Schottky diode provides industry standard packaging, with superior performance and high efficiency.

Product	DataSheet	VRRM	IF	IFSM	VF	Ptot	QC	Package Name
Product	DataSheet	（V）	(A)	(A)	(V)	(W)	(nC)	Package Name
B1D02065E		650	2	16	1.4	39	6.8	TO-252-2
B1D02065K		650	2	16	1.4	43	6.8	TO-220-2
B1D04065E		650	4	30	1.4	60	12	TO-252-2
B2D04065D		650	4	32	1.4	61	12	DFN 5*6
B1D04065K		650	4	30	1.4	72	12	TO-220-2
B1D04065KF		650	4	30	1.4	30	12	TO-220F-2
B2D04065V		650	4	32	1.35	25	12	SMBF
B2D04065K1		650	4	34	1.33	91	14	TO-220-2
B1D06065E		650	6	45	1.43	75	17	TO-252-2
B2D06065E		650	6	48	1.33	107	17	TO-252-2
B1D06065F		650	6	45	1.43	89	17	TO-263-2
B1D06065K		650	6	45	1.43	98	17	TO-220-2
B1D06065KF		650	6	45	1.43	53	17	TO-220F-2
B2D06065K		650	6	48	1.33	119	17	TO-220-2
B1D06065KS	‍	650	6	45	1.44	70	17	TO-220-isolated
B2D06065Q		650	6	45	1.33	98	17	DFN8*8
B1D08065E		650	8	60	1.43	109	24	TO-252-2
B1D08065F		650	8	60	1.44	112	24	TO-263-2
B1D08065K		650	8	60	1.44	129	24	TO-220-2
B2D08065K		650	8	60	1.36	131	24	TO-220-2
B1D08065KF		650	8	64	1.4	48	24	TO-220F-2
B1D08065KS		650	8	64	1.46	74	24	TO-220-isolated
B2D08065KS		650	8	64	1.28	86	24	TO-220-isolated
B1D10065E		650	10	75	1.43	117	29	TO-252-2
B1D10065F		650	10	75	1.45	134	29	TO-263-2
B2D10065F		650	10	75	1.29	125	29	TO-263-2
B1D10065H		650	10	75	1.43	158	29	TO-247-2
B2D10065K		650	10	85	1.29	163	29	TO-220-2
B2D10065K1		650	10	85	1.31	144	29	TO-220-2
B1D10065KF		650	10	75	1.43	34	29	TO-220F-2
B1D10065KS		650	10	75	1.43	89	29	TO-220-isolated
B2D10065Q		650	10	70	1.33	126	29	DFN8*8
B2D10065KS		650	10	85	1.36	109	29	TO-220-isolated
B1D12065K		650	12	90	1.42	170	38	TO-220-2
B1D15065K		650	15	112	1.42	194	46	TO-220-2
B2D15065K		650	15	120	1.29	211	46	TO-220-2
B1D16065HC		650	8/16*	60*	1.44	168*	24	TO-247-3
B2D20065H		650	20	160	1.28	252	64	TO-247-2
B2D20065HC1		650	10/20*	70*	1.34	172*	31	TO-247-3
B2D20065F		650	20	155	1.3	177	65	TO-263-3
B2D20065K		650	20	155	1.29	245	64	TO-220-2
B2D20065TF		650	20	70	1.3	77	60	TO-3PF
B1D30065HC		650	30	100*	1.41	227*	46	TO-247-3
B1D30065TF		650	30	110*	1.37	72*	50	TO-3PF
B1D40065H		650	40	310	1.42	416	130	TO-247-2
B2D40065HC		650	20/40*	160*	1.28	252*	64	TO-247-3
B2D02120E1		1200	2	22	1.35	77	13	TO-252-2
B2D02120K1		1200	2	20	1.35	80	13	TO-220-2
B1D03120E		1200	3	30	1.37	92	19	TO-252-2
B1D05120E		1200	5	60	1.4	124	32	TO-252-2
B2D05120K1		1200	5	55	1.3	147	32	TO-220-2
B1D10120E		1200	10	75	1.48	143	52	TO-252-2
B2D10120H1		1200	10	90	1.36	143	51	TO-247-2
B2D10120HC1		1200	5/10*	55*	1.3	147*	31	TO-247-3
B2D10120K1		1200	10	90	1.37	185	51	TO-220-2
B2D15120H1		1200	15	135	1.34	283	84	TO-247-2
B2D16120HC1		1200	8/16*	80*	1.34	170*	48	TO-247-3
B2D20120H1		1200	20	190	1.35	366	120	TO-247-2
B2D20120F1		1200	20	180	1.3	283	122	TO-263-2
B2D20120HC1		1200	10/20*	90*	1.4	140*	55	TO-247-3
B2D30120HC1		1200	15/30*	135*	1.35	220*	89	TO-247-3
B2D40120HC1		1200	20/40*	180*	1.36	259*	120	TO-247-3

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